Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

High Aspect-ratio Nanoscale Etching in Silicon Using Electron Beam Lithography and Deep Reactive Ion Etching (drie) Technique

This work is dedicated to my dear grandmother, who has not only taught me that learning is a lifelong matter, but has also inspired me by being an example herself even at the age of 80. for the help on design and modeling; and all the members of the IMEMS group for creating a collaborative and pleasant atmosphere. Special thanks to all the MiRC Cleanroom staff, who I am greatly indebted to, for...

Effect of Process Parameters on the Surface Morphology and Mechanical Performance of Silicon Structures After Deep Reactive Ion Etching (DRIE)

The ability to predict and control the influence of process parameters during silicon etching is vital for the success of most MEMS devices. In the case of deep reactive ion etching (DRIE) of silicon substrates, experimental results indicate that etch performance as well as surface morphology and post-etch mechanical behavior have a strong dependence on processing parameters. In order to unders...

Deep Reactive Ion Etching (DRIE)

Cryogenic Deep Reactive Ion Etching of Silicon Micro and Nanostructures

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK

Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography.

We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF(6), optimized for the formation of deep nanopores. We have realized structures with pitches between 440 ...